bcx 54 ... bcx 56 1 sep-30-1999 npn silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcx 51 ... bcx 53 (pnp) 2 1 3 vps05162 2 type marking pin configuration package bcx 54 bcx 54-10 bcx 54-16 bcx 55 bcx 55-10 bcx 55-16 bcx 56 bcx 56-10 bcx 56-16 ba bc bd be bg bm bh bk bl 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89
bcx 54 ... bcx 56 2 sep-30-1999 maximum ratings parameter symbol bcx 54 unit bcx 56 bcx 55 v 45 80 60 v ceo collector-emitter voltage collector-base voltage v cbo 100 60 45 5 5 5 emitter-base voltage v ebo a 1 dc collector current i c peak collector current 1.5 i cm i b 100 ma base current peak base current i bm 200 total power dissipation , t s = 130 c p tot 1 w 150 c junction temperature t j storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 75 k/w junction - soldering point r thjs 20 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcx 54 ... bcx 56 3 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. symbol values unit parameter typ. max. min. dc characteristics 45 60 80 - - - - - - v v (br)ceo bxp 54 bxp 55 bxp 56 collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 bxp 54 bxp 55 bxp 56 45 60 100 - - - - - - v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 - 5 - collector cutoff current v cb = 30 v, i e = 0 - i cbo 100 na - collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c - i cbo - a 20 dc current gain 1) i c = 5 ma, v ce = 2 v 25 - h fe - - dc current gain 1) i c = 150 ma, v ce = 2 v BCX54...56 hfe-grp. 10 hfe-grp. 16 h fe 250 160 250 - 100 160 40 63 100 - dc current gain 1) i c = 500 ma, v ce = 2 v h fe - - - 25 collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - v 0.5 - base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics f t - 100 - mhz transition frequency i c = 50 ma, v ce = 10 v, f = 20 mhz 1) pulse test: t 300 s, d = 2%
bcx 54 ... bcx 56 4 sep-30-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00444 bcx 54...56 150 50 100 ?c t as t 0.2 0.4 0.6 0.8 1.0 w 1.2 p tot t t ; as transition frequency f t = f ( i c ) v ce = 10v 10 10 10 10 bcx 54...56 ehp00445 f ma mhz 0123 5 t 3 10 10 2 1 10 5 5 5 c collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 bcx 54...56 ehp00447 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ? c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00446 bcx 54...56 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
bcx 54 ... bcx 56 5 sep-30-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 0.4 0.8 bcx 54...56 ehp00449 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 5 5 5 10 0 0.2 0.6 100 25 -50 c ? c ? c ? c collector current i c = f ( v be ) v ce = 2v 10 0 0.6 bcx 54...56 ehp00448 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 10 0 0.6 bcx 54...56 ehp00450 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c dc current gain h fe = f ( i c ) v ce = 2v 10 10 10 10 bcx 54...56 ehp00451 h ma -1 0 2 3 fe 3 10 10 2 0 10 5 5 10 1 1 10 5 100 25 -50 555 c ? c ? c ? c
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